Low Noise Amplifier for 2.45 GHz Frequency Band at 0.18 μm CMOS Technology for IEEE Standard 802.11 b/g WLAN

Автор: Viranjay M. Srivastava, Ravinder Kumar

Журнал: International Journal of Intelligent Systems and Applications(IJISA) @ijisa

Статья в выпуске: 9 vol.4, 2012 года.

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This paper presents the design of low noise amplifier (LNA) at 2.45 GHz and integrated at 0.18 µm RF CMOS process technology. This type of LNA at 2.45 GHz is use in the Bluetooth receiver. The proposed method is useful to optimize noise performance and power gain while maintaining good input and output matching. The amplifier is designed to be used as first stage of a receiver for wireless communication. The main aim of designer is to achieve low noise figure with improved gain with the help of CMOS technology by using single stage n-MOS amplifier. The simulation results show a forward gain of 14.0 dB, a noise-figure of 0.5 dB and stability factor is approximate unity, in which the circuit operates at 14.2 mA drain current with supply voltage of 3.5 V and biasing voltage of 1.5 V.

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Advanced design system, Low noise amplifier, Input and output matching, RFIC, VLSI

Короткий адрес: https://sciup.org/15010308

IDR: 15010308

Список литературы Low Noise Amplifier for 2.45 GHz Frequency Band at 0.18 μm CMOS Technology for IEEE Standard 802.11 b/g WLAN

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