Hydride vapor phase epitaxy system for bulk GaN layers deposition

Hydride Vapor Phase Epitaxy is a promising method for the industrial production of GaN substrates. However, no HVPE reactors for the GaN and AlN bulk layer deposition are available on the market. We have developed a HVPE reactor for mass production of bulk GaN and AlN epitaxial layers with thickness up to 10 mm and diameter of 50 mm. A load-lock vacuum chamber and dry in-situ cleaning of growth chamber and substrate holder were implemented to improve the process reproducibility. High-capacity precursor sources have been developed to implement non-stop growth of layers with total thickness of 10 mm and higher. Freestanding GaN crystals with thickness of 5 mm and diameter of 50 mm have been grown with the reactor.