Quantum-chemical modeling of the electronic properties of amorphous tetrahedral structure

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On an example of a nuclear cell of amorphous silicon the technique and results of application of means and methods of quantum chemistry for modelling electronic properties of local nuclear structure of a firm body are considered. Value of a matrix of density of conditions for a practical estimation and calculation of electronic properties of the semiconductor by results of quantum-chemical modelling a fragment of its nuclear structure is shown.

Короткий адрес: https://sciup.org/14040091

IDR: 14040091

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